TSAL4400 데이터시트 PDF ( Data sheet )

U IR Emitting Diode in ø 3 mm (T 1) GaAs, GaAlAs 4 t Packageee at .D w Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve ab

TSA1001 10-BIT, 25MSPS, 35mW A, D CONVERTER s 10-bit A, D converter in deep submicron s s s s s s s s CMOS technology Ultra low power consumption: 35mW @ 25Msps (10mW @ 5Msps) Single supply voltage: 2.5V Input range: 2Vpp differential 25Msps sampling frequency ENOB=9.7 @ Nyquist SFDR typically up

10-BIT, 50MSPS, 50mW A, D CONVERTER NOT FOR NEW DESIGN P P P P P P P P P DESCRIPTION N 10-bit A, D converter in deep submicron CMOS technology Single supply voltage: 2.5V Input range: 2Vpp differential 50Msps sampling frequency Ultra low power consumption: 50mW @ 50Msps ENOB=9.6 @ 40Msps, Fin=

TSA1005 DUAL-CHANNEL, 10-BIT, 20, 40MSPS A, D CONVERTER s 10-bit, dual-channel A, D converter in deep s s s s s s submicron CMOS technology, 20, 40Msps Single supply voltage: 2.5V Independent supply for CMOS output stage with 2.5V, 3.3V capability ENOB=9.5 @ 20Msps, ENOB=9.2 @ 40Msps, Fin=10MH- SF