UPA800T 데이터시트 PDF ( Data sheet )

PRELIMINARY DATA SHEET SILICON TRANSISTOR PA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The PA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. PACKAGE DRAWINGS

NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALL PACKAGE STYLE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60 mm high EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 0.65 2.0 ± 0.2 1.3 2 1 UPA800TF OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TS06 (Top Vie

ALUMINUM ELECTROLYTIC CAPACITORS PA Miniature Sized, Low lmpedance, High Reliability For Switching Power Supplies series Lower impedance than PW series. Smaller case size and high ripple current. Compliant to the RoHS directive (2002, 95, EC). PA Low Impedance PW Specifications ltem Performance

ALUMINUM ELECTROLYTIC CAPACITORS PA Miniature Sized, Low lmpedance, High Reliability For Switching Power Supplies series Lower impedance than PW series. Smaller case size and high ripple current. Compliant to the RoHS directive (2002, 95, EC). PA Low Impedance PW Specifications ltem Performance

ALUMINUM ELECTROLYTIC CAPACITORS PA Miniature Sized, Low lmpedance, High Reliability For Switching Power Supplies series Lower impedance than PW series. Smaller case size and high ripple current. Compliant to the RoHS directive (2002, 95, EC). PA Low Impedance PW Specifications ltem Performance