UPG2009TB 데이터시트 PDF ( Data sheet )

NEC's L, S-BAND 4W SPDT SWITCH UPG2009TB FEATURES LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1, 2 = 2.8 V, 0 V, f = 1.0 GH- LINS = 0.30 dB TYP. @ Vcont1, 2 = 2.8 V, 0 V, f = 2.0 GHz HIGH ISOLATION: ISL = 28 dB TYP. @ Vcont1, 2 = 2.8 V, 0 V, f = 2.0 GHz POWER HANDLING: Pin (0.1dB) = 34 dBm T

DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The PG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MH- to 2.5 GHz, having the lo

NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1, 2 = 2.8 V, 0 V, f = 1.0 GH- LINS = 0.30 dB TYP. @ Vcont1, 2 = 2.8 V, 0 V, f = 2.0 GH- HIGH ISOLATION: ISL = 28 dB TYP. @ Vcont1, 2 = 2.8 V, 0 V, f = 2.0 GH- POWER HANDLING: Pin (0.1dB) = 34 dBm TYP

DATA SHEET SHEET DATA GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. available in chip form. Both devices are PPG100P is low noise amplifier from 50 MH- to 3 GH- and PPG101P is a me

DATA SHEET SHEET DATA GaAs INTEGRATED CIRCUIT PPG100P, PPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. available in chip form. Both devices are PPG100P is low noise amplifier from 50 MH- to 3 GH- and PPG101P is a me

DATA SHEET GaAs INTEGRATED CIRCUIT PG103B WIDE-BAND AMPLIFIER PG103B is GaAs integrated circuit designed as wide band (50 MH- to 3GHz) amplifiers. This device is most suitable for the microwave communication system and the measurement equipment. FEATURES Ultra wide band : f = 50 MH- to 3 GH-