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XL1225 데이터시트 PDF ( Data sheet )이 부품은 SENSITIVE GATE SILICON CONTROLLED RECTIFIERS의 기능을 가지고 있습니다. |
XL1225의 핀아웃 및 회로도를 보려면 검색 결과에 있는 PDF 아이콘을 클릭하세요. |
번호 | 부품번호 | 상세설명 및 전자부품 기능 | 제조사 |
1 | XL1225 HAOPIN | SCRs TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
XL1225
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrate | |
2 | XL1225 ETC | SCR SCR XL 1225 , ML 1225
0.6A 300V (ML1225) , 400V (XL1225), IGT < 200 A
DESCRIPTION The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost and high volume applications.
ABSOLUTE MAXIMUM RATING
Parameter
Part No. Symbol Min. Max
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3 | XL1225 DC COMPONENTS | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
ML1225 XL1225
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 300 to 380 Volts
CURRENT - 0.8 Ampere
Description
These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices. They | |
4 | XL1225 BLUE ROCKET ELECTRONICS | Thyristor XL1225
Rev.E Mar.-2016
描述 , Descriptions TO-92 塑封封 向可控硅。Thyristor in a TO-92 Plastic Package.
特征 , Features 低成本,高容量。 Intended for low cost high volume applications.
用途 , Applications 用于高 控制 路。 Applied to high Voltage control circuit.
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데이터시트 다운로드 |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
부품번호 | 상세설명 | 제조업체 | |
XL1000 | 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier
20.0-40.0 GH- GaAs MMIC Low Noise Amplifier
April 2005 - Rev 01-Apr-05
L1000 Chip Device Layout
Features
Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visua |
Mimix Broadband |
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부품번호 | 상세설명 | 제조업체 | |
XL1000-BD | Low Noise Amplifier XL1000-BD
Low Noise Amplifier 20.0-40.0 GHz
Features
Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure
Testing 100% Visual Inspection to MIL-STD-883 Method
2010 RoHS* C |
MA-COM |
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부품번호 | 상세설명 | 제조업체 | |
XL1001 | 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier
17.0-35.0 GH- GaAs MMIC Low Noise Amplifier
March 2005 - Rev 01-Mar-05
L1001 Chip Device Layout
Features
Balanced Design Excellent Input, Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MI |
Mimix Broadband |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 사이트맵 : 1, 2 |