ZXTP19100CFF 데이터시트 PDF ( Data sheet )

Features BVCEO > -100V BVECO > -7V IC = -2A Continuous Collector Current Saturation Voltage VCE(SAT) < -120mV @ -1A hFE Characterised Up to -2A RCE(SAT) = 95mΩ 1.5W Power Dissipation Complementary NPN Type: ZXTN19100CFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and A

ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC(cont) = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m PD = 1.5W Complementary part number: ZXTN19100CFF Description Packaged in the SOT23 outline this new low saturation 100V PNP transistor offers extremely low

ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC(cont) = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m PD = 1.5W Complementary part number: ZXTN19100CFF Description Packaged in the SOT23 outline this new low saturation 100V PNP transistor offers extremely low

ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management f

ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management f

ZXT10N15DE6 SuperSOT™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.