09N20 가격 및 재고 조회

Pb Free Plating Product ISSUED DATE :2005, 06, 27 REVISED DATE : GI09N20 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti

Pb Free Plating Product ISSUED DATE :2005, 06, 27 REVISED DATE : GI09N20 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti

ThinkPad Hard Disk Drive User’s Guide Note: Before using this information and the product it supports, read the information in Appendix A, “Warranty information”, Appendix B, “European Union warranty information”, and Appendix C, “Notices”. Second Edition (February 2003) Copyright I

ThinkPad Hard Disk Drive User’s Guide Note: Before using this information and the product it supports, read the information in Appendix A, “Warranty information”, Appendix B, “European Union warranty information”, and Appendix C, “Notices”. Second Edition (February 2003) Copyright I

AP09N70P, R Advanced Power Electronics Corp. ▼ Dynamic dv, dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement GG S S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D D BVDSS RDS(ON) ID 600, 675V 0.75Ω 9A Description AP09N70 series are specially designed as ma

FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI P