10NB37LZ 가격 및 재고 조회

® STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 10 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTI

 
 

 
 
  
  
                        
 !   "   

FQP10N20C, FQPF10N20C QFET FQP10N20C, FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimiz

UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a mi

METAL OXIDE VARISTOR 10mm Disc Maximum Allowable Voltage Part Number Acrms JVR10N180M87orr JVR10N220L87orr JVR10N270K87orr JVR10N330K87orr JVR10N390K87orr JVR10N470K87orr JVR10N560K87orr JVR10N680K87orr JVR10N820K87orr JVR10N101K87orr JVR10N121K87orr JVR10N151K87orr JVR10N181K87orr JVR10N201K87orr J

UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in