13N06L 가격 및 재고 조회

FQB13N06L , FQI13N06L May 2001 QFET FQB13N06L , FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N40 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary 13A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-stat

UNISONIC TECHNOLOGIES CO., LTD 13N40K-MT Preliminary 13A, 400V N-CHANNEL POWER MOSFET Power MOSFET DESCRIPTION The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allo

UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching sp

FQB13N50C, FQI13N50C QFET FQB13N50C, FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize