28C512 가격 및 재고 조회

CAT28C512, 513 512K-Bit CMOS PARALLEL EEPROM FEATURES s Fast Read Access Times: 120, 150 ns s Low Power CMOS Dissipation: s Automatic Page Write Operation: Active: 50 mA Max. Standby: 200 A Max. s Simple Write Operation: 1 to 128 Bytes in 5ms Page Load Timer s End of Write Detection: On-Ch

28C04A 4K (512 x 8) CMOS EEPROM FEATURES Fast Read Access Time 150 ns CMOS Technology for Low Power Dissipation - 30 mA Active - 100 A Standby Fast Byte Write Time 200 s or 1 ms Data Retention >200 years Endurance - Minimum 104 Erase, Write Cycles - Automatic Write Operation - Internal Contro

M28C16 16K (2K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: 64 Bytes Page Write Operation Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION: Data Polling Toggl

28C16A 16K (2K x 8) CMOS EEPROM FEATURES Fast Read Access Time 150 ns CMOS Technology for Low Power Dissipation - 30 mA Active - 100 A Standby Fast Byte Write Time 200 s or 1 ms Data Retention >200 years High Endurance - Minimum 104 Erase, Write Cycles Automatic Write Operation - Internal Co

M28C16B M28C17B 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s s Fast Access Time: 90 ns at VCC=5V Single Supply Voltage: 4.5 V to 5.5 V for M28CxxB 2.7 V to 3.6 V for M28CxxB-W s s Low Power Consumption Fast BYTE and PAGE WRITE (up to 64 Bytes) 3 ms at VCC

28C17A 16K (2K x 8) CMOS EEPROM FEATURES Fast Read Access Time 150 ns CMOS Technology for Low Power Dissipation - 30 mA Active - 100 A Standby Fast Byte Write Time 200 s or 1 ms Data Retention >200 years High Endurance - Minimum 104 Erase, Write Cycles Automatic Write Operation - Internal Co