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MX29F001T, B 1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES 5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90, 120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte Programming

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20868-3E FLASH MEMORY CMOS 2M (256K × 8) BIT MBM29F002TC-55, -70, -90, MBM29F002BC-55, -70, -90 s FEATURES Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible

MX29F002, 002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES 262,144x 8 only Fast access time: 55, 70, 90, 120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming (7us t

FINAL Am29F010 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation 5.0 V ± 10% for read, erase, and program operations Simplifies system-level power requirements s High performance 45 ns maximum access time s Low

M29F010B 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME 8 s per Byte typical 8 UNIFORM 16 Kbytes MEMORY BLOCKS PROGRAM, ERASE CONTROLLER Embedded Byte Program al

Am29F002B, Am29F002NB Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offe