29LV400BC 가격 및 재고 조회

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-3E FLASH MEMORY CMOS 4M (512K × 8, 256K × 16) BIT MBM29LV400TC-70, -90, -12, MBM29LV400BC-70, -90, -12 s FEATURES Single 3.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same sof

EN29LV010 EN29LV010 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory FEATURES Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations fo

t.in Am29LV040B Data Sheet The Am29LV040B is not offered for new designs. Please contact a Spansion representative for alternates. The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the spec

Features Single Voltage, Range 3V to 3.6V Supply 3-Volt Only Read and Write Operation Software Protected Programming Fast Read Access Time - 150 ns Low Power Dissipation 15 mA Active Current 50 A CMOS Standby Current Sector Program Operation Single Cycle Reprogram (Erase and Program) 5

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M (2M × 8, 1M × 16) BIT MBM29LV160TE, BE -70, 90, 12 s GENERAL DESCRIPTION The MBM29LV160TE, BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE, BE is of