2N7002-01 가격 및 재고 조회

2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input, Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S C Dim A B C D E G H J K L M Min 0.37 1.19 2.10

WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2 GATE 1 SOURCE 2N7000 TO-92 1. SOURCE 2. GATE 3. DRAIN 1 2 3 Maximum Ratings (TA=25 C Unless

SemiWell Semiconductor Features ■ RDS(on) (Max 5 Ω )@VGS=10V RDS(on) (Max 5.3Ω )@VGS=4.5V ■ Gate Charge (Typical 0.5nC) ■ Maximum Junction Temperature Range (150°C) 2N7000 Logic N-Channel MOSFET Symbol 2. Gate { { 3. Drain ● ◀▲ ● ● { 1. Source General Description This Power

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Vol

2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1 MΩ) Gate-source Voltage Drain Current Continuous Non-repetitive ( tp ≤ 50 �

2N7000 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions TO-92 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 , Features 敏的控制 流和 低的 持 流。 Sensitive gate trigger current and Low Holding current. 用途 , Applications 用作一般的