2SA1235A 가격 및 재고 조회

¾ ¶ ¸ DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT¡ª 23 2SA1235A FEATURES TRANSISTOR ¨PNP 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.2 W ¨ Tamb=25¡æ Collector current ICM: -0.2 A Collector-base voltage V (BR) CBO

Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1235A FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (PNP) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current -0.2 A ICM : Collector-base voltage V V(BR)CBO : -60 Operating and storage

Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features Output of 3 W can be obtained by a complementary pair with 2SC1846 TO-126B package which requires no insulation plate for installation to the

Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltag

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY