50N06 가격 및 재고 조회

50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ 特性 (TC=25ºC) 明 漏源反向 漏源截止 流 源截止 流 通 阻 源 跨 符 BVDSS IDSS IGSS(F

UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold volta

New Product SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V ID (A)a, e 89 80 Qg (Typ) 30 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC, DC Conversio

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N03 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC, DC converters Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-re

KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current 2.Applications VDSS=30V,RDS(on)=6.5mΩ,ID=50A Vds=30V RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@3

Bay Linear Linear Excellence N-Channel Field Effect Transistor 50N035 Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other batter

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance Logic level compatible PHP50N03LT, PHB50N03LT PHD50N03LT QUICK