55N03LT 가격 및 재고 조회

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES ’Trench’ technology Very low on-state resistance Fast switching Low thermal resistance Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK REFERENCE DATA d SYMBOL VDSS =

PHP, PHB, PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 4 September 2002 Product data 1. Description N-channel logic level eld-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PH

PHP, PHB, PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 4 September 2002 Product data 1. Description N-channel logic level eld-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PH

This Material Copyrighted By Its Respective Manufacturer http:, , www.datasheet-pdf.com, This Material Copyrighted By Its Respective Manufacturer http:, , www.datasheet-pdf.com, This Material Copyrighted By Its Respective Manufacturer http:, , www.datasheet-pdf.com, This Material Copyrighte

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 55N10 DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMET

FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resi

MCF FOR MCA PERSONAL RADIO s Features 8 Compactness and light weight 8 Narrow bandwidth Model 55N9BD 55N12B 55N17B 58N9BE 58N12A 58N17BH Nominal Frequency Pole (MHz) 55.025 4 55.025 4 55.025 4 58.1125 4 58.1125 2 58.1125 4 Pass Bandwidth (dB) (kHz) 3 ±4.5 3 ±6 3 ±8.5 3 ±4.5 3 ±6 3 ±8.5 At