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60N06

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The U TC 60N06 is N-c hannel en hancement mod e po wer field effect transistors with stable off-stat e charact eristics, fast switching speed, lo w thermal resistance, usually used at telecom and compute

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60N06 핀배열



Unisonic Technologies
Unisonic Technologies


60N06

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 60N06 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operat



Inchange Semiconductor
Inchange Semiconductor


국내 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ


관련 검색 목록

60N035

N-Channel Field Effect Transistor

Bay Linear Linear Excellence N-Channel Field Effect Transistor 60N035 Advance Information Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotiv


ETC
ETC

datasheet 60N035 pdf


60N03GP

AP60N03GP

AP60N03GS, P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 13.5mΩ 55A ▼ Simple Drive Requirement G S Description The Advanced Power MOSFETs from APEC provide the designer wit


Advanced Power Electronics
Advanced Power Electronics

datasheet 60N03GP pdf


60N03L-10

ST60N03L-10

STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE STB60N03L-10 s s s s s s s s V DSS 30 V R DS(on) < 0.01 Ω ID 60 A s s TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH C


STMicroelectronics
STMicroelectronics

datasheet 60N03L-10 pdf


60N03S

AP60N03S

AP60N03S Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID GD S 30V 13.5mΩ 55A ▼ Simple Drive Requirement TO-263 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination


Advanced Power Electronics
Advanced Power Electronics

datasheet 60N03S pdf


60N05

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary 60A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 60N05


Unisonic Technologies
Unisonic Technologies

datasheet 60N05 pdf



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