60N20F 가격 및 재고 조회

Advance Technical Information HiPerRFTM Power MOSFET F-Class: MegaHert- Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH60N20F IXFT60N20F VDSS ID25 RDS(on) trr = = ≤ ≤ 200V 60A 38mΩ 200ns TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV, dt PD TJ TJM Tst

Bay Linear Linear Excellence N-Channel Field Effect Transistor 60N035 Advance Information Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotiv

AP60N03GS, P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 13.5mΩ 55A ▼ Simple Drive Requirement G S Description The Advanced Power MOSFETs from APEC provide the designer wit

STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE STB60N03L-10 s s s s s s s s V DSS 30 V R DS(on) < 0.01 Ω ID 60 A s s TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH C

AP60N03S Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID GD S 30V 13.5mΩ 55A ▼ Simple Drive Requirement TO-263 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination

UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary 60A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 60N05