80N03L 가격 및 재고 조회

SPP80N03L SIPMOS® Power Transistor Features N channel Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A RDS(on) 0.006 Ω Avalanche rated Logic Level dv, dt rated 175°C operating temperature Type SPP80N03L

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 80N06 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PA

UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET N-CHANNEL 80V (D-S) MOSFET DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC trench technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc.

CMP80N06, CMB80N06, CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Features Simple Drive

Preliminary data HiPerFASTTM IGBT IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Transient TC = 25°C,

High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Maximum Ratings T J