AO331 가격 및 재고 조회

R Austria Mikro Systeme International AO331 CUB 0.6 m CMOS AO331 is an AND , OR circuit providing the logical function Q = (A.B.C+D.E.F+G). Truth Table A L L L X X X X X X X X H B X X X L L L X X X X X H C X X X X X X L L L X X H D L X X L X X L X X X H X E X L X X L X X L X X H X F X X L X X

SMD Type MOSFIECT N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400) Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 Absolut

Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited

30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, [email protected] < 28mΩ RDS(ON), [email protected], [email protected] < 33mΩ RDS(ON), [email protected], [email protected] < 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions AO3400 D SOT-23-3L GS

AO3400 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard

AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & So