AO8403 가격 및 재고 조회

AO8403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD

July 2001 AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is su

AO8800 General Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8800 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable f

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It i

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8801 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It i

AO8801A 20V P-Channel MOSFET General Description The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS ID (at VGS=-10V) RDS(ON)