BB501의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. High gain; PG = 21.5 dB typ. at f = 900 MH- Low noise; NF = 1.85 dB typ. at f = 900 MH- Withstanding to ESD; Build   Hitachi |
| BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-701C (Z) 4th. Edition Nov. 1998 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. High gain; PG = 21.5 dB typ. at f = 900 MH- Low noise; NF = 1.85 dB typ. at f = 900 MH- Withstanding to ESD; Build Hitachi |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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BB501M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB501M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-700C (Z) 4th. Edition Nov. 1998 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. High gain; PG = 21.5 dB typ. at f = 900 MH- Low noise; NF = 1.85 dB typ. at f = 900 MH- Withstanding to ESD; Build Hitachi  |
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BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MH- High gain; PG = 22 dB typ. at f = 900 MH- Withstanding to ESD; Build in E Hitachi |
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BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MH- High gain; PG = 22 dB typ. at f = 900 MH- Withstanding to ESD; Build in E Hitachi |
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BB502C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-810B(Z) 3rd. Edition Jun. 1999 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MH- High gain; PG = 22 dB typ. at f = 900 MH- Withstanding to ESD; Build in E Hitachi |
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BB502M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier BB502M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-809B(Z) 3rd. Edition Jun. 1999 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MH- High gain; PG = 22 dB typ. at f = 900 MH- Withstanding to ESD; Build in E Hitachi |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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검색결과에 표시되지 않는 내용은 수일내에 자동으로 업데이트 됩니다. 이 페이지에 대한 링크를 허용합니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |