BD2400U510-1366 가격 및 재고 조회

Preliminary Data Sheet BD2400U510-1366 Ultra Low Profile 1366 Balun 50Ω to 100Ω Balanced Key Patents Lead Microwave Tech Features: ● 2100~2500 MH- ● 0.85mm Height Profile ● 50Ohm to 2x50 Ohm ● High CMRR ● Low Insertion Loss ● Input to Output DC Isolation ● Surface Mountable ● Tap

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202, 204 APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into

NPN BD201 BD203 SILCON EPITAXIAL-BASE POWER TRANSISTORS The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or 8Ω load. PNP complements are BD202 and BD204 Compliance

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complement to Type BD201, 203 APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABS

Continental Device India Limited An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD202, BD204, BDX78 BD202, BD204, BDX78 PNP PLASTIC POWER TRANSISTORS Complementary BD201, BD203 and BDX77 Medium Power Switching and Amplifier Applications N LH BF C E 12 3 A OO

NTE182 (NPN) & NTE183 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified