BD900 가격 및 재고 조회

BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A

SEMICONDUCTORS BD896 BD898 BD900 BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application. N

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ¡¤With TO-220C package ¡¤Complement to type BD895, 897, 899, 901 ¡¤DARLINGTON APPLICATIONS ¡¤For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN

SEMICONDUCTORS BD896 BD898 BD900 BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application. N

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for

BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD895A, BD897A and BD899A 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E q