C2690 가격 및 재고 조회

DATA SHEET SILICON POWER TRANSISTOR 2SC2690,2690A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW, HIGH FREQUENCY POWER AMPLIFICATION DESCRIPTION These products are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES Suitable for use in driver stage of 50

Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors C 2611 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperatu

2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2615 DESCRIPTION ·With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig

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