C35B 가격 및 재고 조회

WTE POWER SEMICONDUCTORS C35A C35K Pb 35A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indi

Ordering number:ENN1425C PNP, NPN Epitaxial Planar Silicon Transistors 2SA1380, 2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN)

Ordering number:EN1426B PNP, NPN Epitaxial Planar Silicon Transistors 2SA1381, 2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions unit:mm 2009A [2SA1381, 2SC3503] · High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitance and excellent h

Ordering number:EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features · High fT. · Small reverse transfer capacitance. Package Dimensions unit:mm 2006A [2SC3504] EIAJ : SC-51 B : Base C : Collector E : Emitter SANYO : MP Speci

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC3505 DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers

Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 15.0±0.3 (0.7) Unit: mm 5.0±0.2 (3.2) 11.0±0.2 ■ Features High-speed switching High collector-base voltage (Emitter open) VCBO Satisfactory linearity of forward current trans