C5379 가격 및 재고 조회

C5379 VCXO Typical Applications Telecommunication Wireless Application Features Standard 4-Pin DIP Package (Half Size) Previous Vectron Model Numbers Frequency range BB 1 MH- 125 MHz Frequency stabilities1 Parameter Overall (vs. Initial, vs. operating temperature range vs. supply voltage c

Ordering number:EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBI

Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT

UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well

KSC5305D KSC5305D High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit p

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Collect