C6000 가격 및 재고 조회

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Absolute M

Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide safe

Ordering number : ENN8275 2SA2169 , 2SC6017 PNP , NPN Epitaxial Planar Silicon Transistors 2SA2169 , 2SC6017 Applications High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-e

Ordering number : ENN8342 2SC6019 2SC6019 Applications NPN Epitaxial Planar Silicon Transistor DC , DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturat

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC6040 Unit: mm High-speed switching: tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V

2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 μs (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Unit: mm Absol