C6042의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
C6042 NPN Transistor - 2SC6042 2SC6042
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6042
High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
High-speed switching: tf = 0.2 μs (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Unit: mm
Absol Toshiba Semiconductor |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
C6012 NPN Transistor - 2SC6012 Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide safe Panasonic Semiconductor |
C6017 NPN Transistor - 2SC6017
Ordering number : ENN8275
2SA2169 , 2SC6017
PNP , NPN Epitaxial Planar Silicon Transistors
2SA2169 , 2SC6017
Applications
High-Current Switching Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process. Large current capacitance. Low collector-to-e Sanyo Semicon Device |
C6019 NPN Transistor - 2SC6019
Ordering number : ENN8342
2SC6019
2SC6019
Applications
NPN Epitaxial Planar Silicon Transistor
DC , DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturat Sanyo Semicon Device |
C6040 NPN Transistor - 2SC6040
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC6040
Unit: mm
High-speed switching: tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V
Toshiba Semiconductor |
C6042 NPN Transistor - 2SC6042 2SC6042
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6042
High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
High-speed switching: tf = 0.2 μs (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Unit: mm
Absol Toshiba Semiconductor |
국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |