CBS10S30 가격 및 재고 조회

Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathode 2: Anode 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltag

CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .280 4L STUD A 45° FEATURES: Pg = 10 dB min. @ 960 MH- P1dB = 1.0 Watts min. at 960 MH- Omnigold™ Metalization System B C E

CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R (4X).060 R E D C .1925 F H I N L G M FEATURES: Input Matching Network Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC

CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for .040x45° C B 2XØ.130 PACKAGE STYLE .230 6L FLG A 4X .025 R .115 .430 D E .125 G H I J K L F FEATURES: Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.5 A 48 V 30 V 4.0

CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MH- Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG (C) FEATURES: Internal Input, Output Matching PG = 9.0 dB Typ. at 150 W, 900 MH- Omnigold™ Metalization System E D C .1925 F H I

CBSL30 DESCRIPTION: NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R C B 2XØ.130 .115 .430 D E .125 G H I J K L F The ASI CBSL30 is Designed for FEATURES: Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 7.5 A 48V 25 V 3