CED4060AL의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| CED4060AL N-Channel Enhancement Mode Field Effect Transistor CED4060AL, CEU4060AL
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 packag   CET |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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CED01N6G N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N6G, CEU01N6G
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D G S CEU SERIES TO-252(D-PAK)
G D
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S CED SERIES TO-251(I-PAK)
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ABSOLUTE  Chino-Excel Technology  |
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CED01N7 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N7, CEU01N7
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D G S CEU SERIES TO-25 Chino-Excel Technology |
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CED02N6 N-Channel Logic Level Enhancement Mode Field Effect Transistor CED02N6, CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package.
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6
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D G S
G D S
CEU SERIES TO-2 CET |
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CED02N65A N-Channel Enhancement Mode Field Effect Transistor CED02N65A, CEU02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G CET |
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CED02N6A N-Channel Enhancement Mode Field Effect Transistor CED02N6A, CEU02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252 CET |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |