CJL2301 가격 및 재고 조회

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL2301 Dual P-Channel MOSFET V(BR)DSS -20V RDS(on)MAX 90mΩ@-4.5V 125mΩ@-2.5V 200mΩ@-1.8V ID -2.3A SOT-23-6L FEATURE TrenchFET Power MOSFET Equivalent to Two CJ2301 APPLICATION DC, DC convert

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3407 P-Channel Enhancement Mode Field Effect Transistor V(BR)DSS -30V RDS(on)MAX \60mΩ@-10 V 87mΩ@-4.5V ID -4.1A General Description The CJL3407 uses advanced trench technology to provide excellent R

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-L Plastic-Encapsulate MOSFETS CJ, 3415 P-Channel 20V(D-S) MOSFET V(BR)DSS -20V RDS(on)MAX 50mΩ@-4.5V 60mΩ@-2.5V 73mΩ@-1. 8V ID -4.0A SOT-23-6L FEATURE Excellent RDS(ON), low gate charge,low gate voltage High power and current h

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3443 P-Channel 20-V(D-S) MOSFET FEATURE - Fast Switching Speed - Low Gate Charge - High Performance Trench Technology for extremely Low RDS(on) SOT-23-6L 1. GATE 2. DRAIN 3. SOURCE Description This P-Chann

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6601 P-channel and N-channel Complementary MOSFETS GENERAL DESCRIPTION The CJL6601 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The complementary MOSFETS form a high-spe

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6602 P-channel and N-channel Complementary MOSFETS P-channel V(BR)DSS -30V RDS(on)MAX 135 mΩ@-10V 185mΩ@-4.5V 265mΩ@-2.5V ID -2.3A N-channel V(BR)DSS 30V RDS(on)MAX 60mΩ@10V 75mΩ@4.5V 115mΩ@2.5V