CJQ07N10 가격 및 재고 조회

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ07N10 N-Channel Power MOSFET DESCRIPTION The device is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4406 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX 12mΩ@10V 30 V 16mΩ@4.5V ID 10A DESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4407 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX -30 V 13mΩ@-10V 17mΩ@-6V ID -12A SOP8 DESCRIPTION The CJQ4407 combines advanced trench MOSFET technology with a low resistance package to provide extrem

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4410 N-Channel Power MOSFET V(BR)DSS 30V RDS(on)MAX 13.5mΩ@10V 20mΩ@ 4.5 V ID 7.5A DESCRIPTION The CJQ4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET V(BR)DSS -30V RDS(on)MAX 24mΩ@ -10V 35mΩ@ -4.5V ID -9.1A DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body dio

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET V(BR)DSS 60 V RDS(on)MAX 22mΩ@10V 36mΩ@4.5V ID 8.2A SOP8 FEATURE - TrenchFET Power MOSFET - Low R DS(on) - Low Gate Charge MARKING APPLICATION - Load Switch - PWM applications Equ