CMSH3-200MFL 가격 및 재고 조회

CMSH3-100MFL CMSH3-150MFL CMSH3-200MFL SURFACE MOUNT SILICON SCHOTTKY RECTIFIERS 3.0 AMP, 100 THRU 200 VOLT SMAFL CASE APPLICATIONS: Reverse polarity protection Voltage clamping DC-DC output rectification Power management w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCT

CMS-S035-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.889 * 0.889 mm 2 Bond Pad size(B) : 0.762 * 0.762 mm 2 A Thickness : 300 m ± 20 m Metalization : Anode Ti, Ni, Ag B Metalization : Cathod

CMS-S040-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 A Thickness : 300 m ± 20 m Metalization : Anode Ti, Ni, Ag B Metalization : Cathod

CMS-S040-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 A Thickness : 300 m ± 20 m Metalization : Anode Ti, Ni, Ag B Metalization : Cathode

CMS-S040-040L SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 A Thickness : 300 m ± 20 m Metalization : Anode Ti, Ni, Ag B Metalization : Catho

CMS-S050-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.270 * 1.270 mm 2 Bond Pad size(B) : 1.143 *1.143 mm 2 A Thickness : 300 m ± 20 m Metalization : Anode Ti, Ni, Ag B Metalization : Cathode T