D1047 가격 및 재고 조회

Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817, 2SD1047 140V, 12A AF 60W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). ·

2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MH- ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W 28V 175MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN G H K I J SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS Tol. 0.

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.1

TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W 28V 175MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN F G H K I J SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NO

TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W 28V 175MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN H I F M K J N SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS C

Product Specification D10040180GT GaAs Power Doubler, 40 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable under all terminations D10040180GT AP