D2162 가격 및 재고 조회

DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and

2SD2103 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2.2 kΩ (Typ) 3 2SD2103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collecto

2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ) 3 2SD2104 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base vol

2SD2105 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 12 3 http:, , www.nDatasheet.com 2SD2105 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emit

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE=