DFP50N06 가격 및 재고 조회

DFP50N06 N-Channel MOSFET Features RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv, dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.022 ohm ID = 50A General Description This N-channel enhancement mode field-effect power tr

DFP2INT Floating Point To Integer Pipelined Converter ver 2.20 OVERVIEW The DFP2INT is the pipelined floating point to integer converter. The input and output numbers format is according to IEEE-754 standard. DFP2INT supports single precision real numbers and double word integers (4 Bytes). Convert

DFP2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv, dt Capability 100% Avalanche Tested 1. Gate { ◀ { 2. Drain BVDSS = 600V ● ▲ ● ● RDS(ON) = 5.5 ohm ID = 2.4A 3. Source { General Description

DFP30N06 N-Channel MOSFET Features Low RDS(on) (0.04 )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv, dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.04 ohm ID = 30A General Description This N-c

DFP4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv, dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V ● ▲ ● ● RDS(ON) = 2.5 ohm ID = 4A 3. Source { Gene

DFP50N06 N-Channel MOSFET Features RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv, dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.022 ohm ID = 50A General Description This N-channel enhancement mode field-effect power tr