DIM1600FSM17-A000 가격 및 재고 조회

DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2001,, version DS5455-1.1 DS5455-2.0 March 2002 FEATURES s s s s 10 s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(s

DIM100WHS12-A000 DIM100WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5735-1.0 DS5735-2.0 May 2004 FEATURES I I I 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 1

DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10 s Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 1.7V 100A 200A APPLICAT

DIM100WHS17-A000 DIM100WHS17-A000 Half Bridge IGBT Module PDS5715-1.1 Febuary 2004 FEATURES I I I 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 100A 200A *(measured at the power busbars

DIM100WHS17-E000 DIM100WHS17-E000 Half Bridge IGBT Module PDS5719-1.2 February 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10 s Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1700V 2.0V 100A 200A APPLICA

Preliminary Information Data DIM1200ASM45-TL000 Single Switch IGBT Module D6158S-1 September 2014 (LN31981) FEATURES 10 s Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base With AlN Substrates KEY PARAMETERS VCES VCE(sat) * (typ)