DMN1016UCB6 가격 및 재고 조회

DMN1016UCB6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) 20mΩ @ VGS = 4.5V 23mΩ @ VGS = 2.5V ID TA = +25°C 6.6A 6.1A Features and Benefits Low QG & QGD Small Footprint Low Profile 0.62mm Height Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2) Halogen and

SPICE MODELS: DMN100 Lead-free Green DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free B

DMN1016UCB6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) 20mΩ @ VGS = 4.5V 23mΩ @ VGS = 2.5V ID TA = +25°C 6.6A 6.1A Features and Benefits Low QG & QGD Small Footprint Low Profile 0.62mm Height Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2) Halogen and

Green DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C 11A 10 9A 8A 5A Features 0.6mm profile ideal for l

NEW PRODUCT Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON))

NEW PRODUCT DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 10.7A 9.8A 9.1A 8.0A 5.3A Description This new generation MOSFET has been designed