DMN2004TK 가격 및 재고 조회

NEW PRODUCT Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input, Output Leakage ESD Protected up to 2kV Lead Free By Design, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability SOT-523

SPICE MODELS: DMN100 Lead-free Green DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free B

DMN1016UCB6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) 20mΩ @ VGS = 4.5V 23mΩ @ VGS = 2.5V ID TA = +25°C 6.6A 6.1A Features and Benefits Low QG & QGD Small Footprint Low Profile 0.62mm Height Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2) Halogen and

Green DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C 11A 10 9A 8A 5A Features 0.6mm profile ideal for l

NEW PRODUCT Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON))

NEW PRODUCT DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 10.7A 9.8A 9.1A 8.0A 5.3A Description This new generation MOSFET has been designed