DMTH6004SK3Q 가격 및 재고 조회

A D V A N C E DNIEN FWOPRRMOADT IU COTN Green DMTH6004SK3Q 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max QG Typ 3.8mΩ @ VGS = 10V 95.4nC ID Max TC = +25°C (Note 10) 100A Features Rated to +175°C Ideal for High Ambient Temperature Environments 100%

Green DMT10H010LCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 9.5mΩ @VGS = 10V Package TO220AB ID TC = +25°C 98A Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management appli

Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 11.3mΩ @ VGS = 6.0V ID TC = +25°C 68.8A 60.7A Green DMT10H010LK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losse

ADVANCED INFORMATION Product Summary Green DMT10H010LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features BVDSS 100V RDS(ON) Max 8.3mΩ @ VGS = 10V ID TC = +25°C 98A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior

A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V ID TC = +25°C 29.5A Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(

A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H014LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 14mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V ID TA = +25°C 8.9A 7.9A Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production High Co