FDMC7672의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
FDMC7672 N-Channel Power Trench MOSFET FDMC7672 N-Channel Power Trench® MOSFET
June 2014
FDMC7672
N-Channel Power Trench® MOSFET
30 V, 16.9 A, 5.7 mΩ
Features
General Description
Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A High performance technology for extremely low rDS( PDF 다운로드Fairchild Semiconductor |
FDMC7672S N-Channel Power Trench SyncFET FDMC7672S N-Channel Power Trench® SyncFETTM
FDMC7672S
N-Channel Power Trench® SyncFETTM
30 V, 14.8 A, 6.0 m:
Features
General Description
September 2010
Max rDS(on) = 6.0 m: at VGS = 10 V, ID = 14.8 A Max rDS(on) = 7.1 m: at VGS = 4.5 V, ID = 12.4 A High performance technology for extrem PDF 다운로드Fairchild Semiconductor |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w Fairchild Semiconductor |
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM3300NZ
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead fr Fairchild Semiconductor |
FDM3622 N-Channel PowerTrench MOSFET FDM3622 N-Channel PowerTrench® MOSFET
January 2005
FDM3622 N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ Features
r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Singl Fairchild Semiconductor |
FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET FDM606P
July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Fairchild Semiconductor |
FDM6296 Single N-Channel / Logic-Level / PowerTrench MOSFET FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET
December 2004
FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET
Features
■ 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for ef cient switching performance ■ Low Pro le Fairchild Semiconductor |
국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |