FDMS7660의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
FDMS7660 N-Channel MOSFET FDMS7660 N-Channel PowerTrench® MOSFET
April 2009
FDMS7660
N-Channel PowerTrench® MOSFET
30 V, 2.8 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC, DC converters using either synchr PDF 다운로드Fairchild Semiconductor |
FDMS7660AS N-Channel MOSFET FDMS7660AS N-Channel PowerTrench® SyncFETTM
September 2009
FDMS7660AS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 2.4 mΩ Features General Description
The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have PDF 다운로드Fairchild Semiconductor |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w Fairchild Semiconductor |
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM3300NZ
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead fr Fairchild Semiconductor |
FDM3622 N-Channel PowerTrench MOSFET FDM3622 N-Channel PowerTrench® MOSFET
January 2005
FDM3622 N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ Features
r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Singl Fairchild Semiconductor |
FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET FDM606P
July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Fairchild Semiconductor |
FDM6296 Single N-Channel / Logic-Level / PowerTrench MOSFET FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET
December 2004
FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET
Features
■ 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for ef cient switching performance ■ Low Pro le Fairchild Semiconductor |
국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |