FDMS7670AS 가격 및 재고 조회

FDMS7670AS N-Channel PowerTrench® SyncFETTM September 2009 FDMS7670AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 mΩ Features General Description The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have b

FDM2452NZ July 2005 FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w

FDM3300NZ February 2003 FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead fr

FDM3622 N-Channel PowerTrench® MOSFET January 2005 FDM3622 N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ Features r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Singl

FDM606P July 2002 FDM606P P-Channel 1.8V Logic Level Power Trench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET December 2004 FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET Features ■ 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for ef cient switching performance ■ Low Pro le