FDP8443의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| FDP8443 N-Channel MOSFET FDP8443 N-Channel PowerTrench® MOSFET
August 2007
FDP8443
® N-Channel PowerTrench MOSFET
40V, 80A, 3.5mΩ
Features
Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 142nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified t PDF 다운로드  Fairchild Semiconductor |
| FDP8443_F085 N-Channel PowerTrench MOSFET FDP8443_F085 N-Channel PowerTrench® MOSFET
March 2009
FDP8443_F085
N-Channel PowerTrench® MOSFET
40V, 80A, 3.5mΩ
Features
Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 142nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qu PDF 다운로드Fairchild Semiconductor |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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FDP027N08B N-Channel PowerTrench MOSFET FDP027N08B N-Channel PowerTrench® MOSFET
FDP027N08B
N-Channel PowerTrench® MOSFET
80 V, 223 A, 2.7 mΩ
November 2013
Features
RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr = 112 nC Soft Reverse-Recovery Body Diode Enables High Ef Fairchild Semiconductor  |
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FDP030N06 MOSFET ( Transistor ) FDP030N06 N-Channel PowerTrench® MOSFET
FDP030N06
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.2 mΩ
November 2013
Features
RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Cur Fairchild Semiconductor |
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FDP030N06B_F102 MOSFET ( Transistor ) FDP030N06B_F102 N-Channel PowerTrench® MOSFET
FDP030N06B_F102
N-Channel PowerTrench® MOSFET
60 V, 195 A, 3.1 mΩ
November 2013
Features
RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr = 78 nC Soft Reverse-Recovery Body Diode Enables Fairchild Semiconductor |
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FDP032N08 MOSFET ( Transistor ) FDP032N08 N-Channel PowerTrench® MOSFET
FDP032N08
N-Channel PowerTrench® MOSFET
75 V, 235 A, 3.2 mΩ
November 2013
Features
RDS(on) = 2.5 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Cur Fairchild Semiconductor |
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FDP032N08B MOSFET ( Transistor ) FDP032N08B N-Channel PowerTrench® MOSFET
FDP032N08B
N-Channel PowerTrench® MOSFET
80 V, 211 A, 3.3 mΩ
November 2013
Features
RDS(on) = 2.85 mΩ (Typ.) @ VGS = 10 V, ID = 50 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr Soft Reverse-Recovery Body Diode Enables High Efficiency in Fairchild Semiconductor |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |