FDZ206P 가격 및 재고 조회

FDZ206P January 2003 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in

FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET July 2008 FDZ1905PZ Common Drain P-Channel 1.5V 20V, 3A, 123mΩ Features Max rS1S2(on) = 126mΩ at VGS = 4.5V, IS1S2 = 1A Max rS1S2(on) = 141mΩ at VGS = 2.5V, IS1S2 = 1A Max rS1S2(on) = 198mΩ at VGS = 1.8V, IS1S2 =

FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET October 2006 FDZ191P P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET -20V, -1A, 85mΩ Features General Description Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A Max rDS(on) = 200mΩ at VGS = -1.5V,

FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET January 2010 FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mΩ Features Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 49

P-Channel 1.7V PowerTrench® WL-CSP MOSFET December 2006 FDZ193P P-Channel 1.7V PowerTrench® WL-CSP MOSFET -20V, -1A, 90mΩ Features General Description Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A Occ

FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET June 2009 FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mΩ Features Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A Max rDS(on) =