GB503 가격 및 재고 조회

GB502 thru GB504 Block Type Automotive Rectifier Voltage Range 200 to 400 Volts Current 50 Amps Technical Specification: Features: Low leakage Low forward voltage drop High current capability High forward surge current capability Mechanical Data: Technology : Vacuum soldered Copper cup with trans

GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED® clamping diode Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Speed 8 kH- to 60 kH- Very low internal inductan

GB50NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED® clamping diode Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Speed 8 kH- to 60 kH- Very low internal inducta

Bulletin PD - 94567 rev.B 08, 03 GB50XF120K IGBT SIXPACK MODULE Features Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficien

GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A FEATURES Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design ECONO2 4PACK RoHS COMPLIANT Speed 8 to 60 kH- Designed and qualified for in

GB5101 Battery Protection IC for Single-cell Pack Features Low supply current Normal operation: 3uA typ. @ VCC = 3.9V Power-down mode: 0.1uA max. @VCC = 2.0V Over-charge detection voltage (VCU) 4.25~4.3V, accuracy: ±50mV Over-charge release voltage (VCR) 4.05~4.1V, accuracy: ±50mV Over-discharge d