H5N2001LD의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| H5N2001LD Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
Low on-resistance Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4.   Renesas Technology |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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H5N2001LM Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
Low on-resistance Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4. Renesas Technology  |
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H5N2001LS Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1339-0600 Rev.6.00 Jul 14, 2006
Features
Low on-resistance Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4. Renesas Technology |
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H5N2003P Silicon N Channel MOS FET High Speed Power Switching H5N2003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0235-0100Z Rev.1.00 Apr.09.2004
Features
Low on-resistance Low leakage current High speed switching
Outline
TO-3P
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C) Item Drain to Sourc Renesas Technology |
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H5N2004DL Silicon N Channel MOS FET High Speed Power Switching H5N2004DL, H5N2004DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005
Features
Low
Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 A max (at VDS = 200 V) High speed switching: tf = 10 ns typ (at VGS = 10 Renesas Technology |
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H5N2004DS Silicon N Channel MOS FET High Speed Power Switching H5N2004DL, H5N2004DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005
Features
Low
Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 A max (at VDS = 200 V) High speed switching: tf = 10 ns typ (at VGS = 10 Renesas Technology |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |