HAT2033의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| HAT2033 Silicon N Channel Power MOS FET High Speed Power Switching HAT2033R, HAT2033RJ
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-664B (Z) 3rd. Edition February 1999 Features
For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
Outline
SOP 8
8 5 7 6
5 6 7 8 D D D D
3 1   Hitachi Semiconductor |
| HAT2033R Silicon N Channel Power MOS FET High Speed Power Switching HAT2033R, HAT2033RJ
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-664B (Z) 3rd. Edition February 1999 Features
For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
Outline
SOP 8
8 5 7 6
5 6 7 8 D D D D
3 1 Hitachi Semiconductor |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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HAT-903 RELAYS RELAYS
SINCE 1976
HAT-900 SERIES HEAVY DUTY SPDT 40A NORMALLY OPEN & 30A NORMALLY CLOSED
GENERAL SPECIFICATIONS
Contact Material: silver cadmium oxide with copper base Max. continuous rated voltage: 110% of nominal voltage. Pull-In voltage: 75% of nominal voltage. Max @ 25°C. Drop-Out voltage:  HASCO  |
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HAT1000-S Current Transducer HAT 500~1500-S Current Transducer HAT 500..1500 - S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
IPN = 500 .. 1500 A VOUT = ± 4 V
Preliminary
Electrical data
Primary nominal r  LEM |
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HAT1000-S (HAT200-S - HAT1500-S) Current Transducer Current Transducer HAT 200..1500-S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit).
IPN = 200..1500 A VOUT = ± 4 V
Electrical data
Primary nominal r.m.s. current IP LEM |
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HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching HAT1016R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-471 D (Z) 5th. Edition February 1999 Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP 8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate Hitachi Semiconductor |
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HAT1020 Silicon P Channel Power MOS FET High Speed Power Switching HAT1020R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-435 H (Z) 9th. Edition February 1999 Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP 8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Hitachi Semiconductor |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |