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HAT2033RJ

Silicon N Channel Power MOS FET High Speed Power Switching

HAT2033R, HAT2033RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-664B (Z) 3rd. Edition February 1999 Features For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP 8 8 5 7 6 5 6 7 8 D D D D 3 1



HAT2033RJ PDF 데이터시트

Hitachi Semiconductor
Hitachi Semiconductor


 

국내 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ


관련 검색 목록

HAT-903

RELAYS

RELAYS SINCE 1976 HAT-900 SERIES HEAVY DUTY SPDT 40A NORMALLY OPEN & 30A NORMALLY CLOSED GENERAL SPECIFICATIONS Contact Material: silver cadmium oxide with copper base Max. continuous rated voltage: 110% of nominal voltage. Pull-In voltage: 75% of nominal voltage. Max @ 25°C. Drop-Out voltage:


HASCO
HASCO

datasheet HAT-903 pdf


HAT1000-S

Current Transducer HAT 500~1500-S

Current Transducer HAT 500..1500 - S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). IPN = 500 .. 1500 A VOUT = ± 4 V Preliminary Electrical data Primary nominal r


LEM
LEM

datasheet HAT1000-S pdf


HAT1000-S

(HAT200-S - HAT1500-S) Current Transducer

Current Transducer HAT 200..1500-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). IPN = 200..1500 A VOUT = ± 4 V Electrical data Primary nominal r.m.s. current IP


LEM
LEM

datasheet HAT1000-S pdf


HAT1016R

Silicon P Channel Power MOS FET High Speed Power Switching

HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-471 D (Z) 5th. Edition February 1999 Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate


Hitachi Semiconductor
Hitachi Semiconductor

datasheet HAT1016R pdf


HAT1020

Silicon P Channel Power MOS FET High Speed Power Switching

HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8


Hitachi Semiconductor
Hitachi Semiconductor

datasheet HAT1020 pdf



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