HCPL-4100300의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| HCPL-4100300 Optically Coupled 20 mA Current Loop Transmitter Optically Coupled 20 mA Current Loop Transmitter Technical Data
HCPL-4100
Features
Guaranteed 20 mA Loop Parameters Data Input Compatible with LSTTL, TTL and CMOS Logic Guaranteed Performance over Temperature (0°C to 70°C) Internal Shield for High Common Mode Rejection 20 kBaud Data Rate at  .gif){kind=small} Agilent(Hewlett-Packard) |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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HCP12NK65V N-Channel MOSFET HCP12NK65V
Apr 2014
HCP12NK65V
650V N-Channel Super Junction MOSFET
BVDSS = 650 V RDS(on) typ = 0.34 ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled G  SemiHow  |
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HCP20C60 Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP20C60
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=20A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type
General Description
Standard gate triggering SCR is suitable  SHANTOU HUASHAN ELECTRONIC DEVICES |
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HCP20NT60V N-Channel MOSFET HCP20NT60V
Apr 2014
HCP20NT60V
600V N-Channel Super Junction MOSFET
BVDSS = 600 V RDS(on) typ = 0.17 ID = 20 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled G SemiHow |
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HCP60R750V 600V N-Channel Super Junction MOSFET HCP60R750V
HCP60R750V
600V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area SemiHow |
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HCP65R360S 650V N-Channel Super Junction MOSFET HCP65R360S
HCP65R360S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area SemiHow |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |